s mhop microelectronics c orp. a STG8205 symbolv ds v gs i dm 85 w a p d c 1.5 -55 to 150 i d units parameter 20 6 24 c/w vv 10 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 6a 35 @ vgs=2.5v 26 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw sep,17,2009 1 details are subject to change without notice. a t a =25 c (t op v ie w) t s s op 1 g 2 s 2 s 2 d 1 /d 2 g 1 s 1 s 1 d 1 /d 2 23 4 8 76 5 s 1 s 2 g 1 d 1 g 2 d 2 t a =70 c 4.8 a t a =70 c 1 w dual n-channel enhancement mode field effect transistor green product
symbol min typ max units bv dss 20 v 1 i gss 100 na v gs(th) 0.5 v m ohm v gs =4.5v , i d =6a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =16v , v gs =0v v gs = 10v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics STG8205 ver 1.0 0.8 1.5 g fs 26 s v sd c iss 410 pf c oss 135 pf c rss 114 pf q g 14 nc 37 nc q gs 19 nc q gd 28 t d(on) 8.8 ns t r 1.4 ns t d(off) 4.2 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =10v i d =1a v gs =4.5v r gen =10 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =6a input capacitance output capacitance dynamic characteristics forward transconductance diode forward voltage reverse transfer capacitance v gs =2.5v , i d =5.1a m ohm c f=1.0mhz c v ds =10v,i d =6a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.0a 0.815 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw sep,17,2009 2 _ i s maximum continuous drain-source diode forward current 2.0 a b 21 26 26 35
STG8205 ver 1.0 www.samhop.com.tw sep,17,2009 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 1 . 5 v v g s = 4 . 5 v v g s = 2 v v g s = 2 . 5 v 15 12 9 6 3 0 0 0.4 2.4 2.0 1.6 1.2 0.8 tj=125 c 25 c 55 c 48 40 32 24 16 8 1 1 5 10 15 20 25 v g s =2.5v v g s =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =4.5v i d = 6a v g s =2.5v i d = 5.1 a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 1.20 125 150 100 75 50 25 0 -25 -50 i d =250ua
STG8205 ver 1.0 www.samhop.com.tw sep,17,2009 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage crss coss c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 900750 600 450 300 150 0 0 2 4 6 8 10 12 60 10 1 0.1 0.1 1 10 30 50 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 1 10 100 100 10 1 1000 vds=10v,id=1a vgs=4.5v td(on) tr td(off) tf 25 c 125 c 75 c r ds (o n) l im i t v g s =4.5v s ingle p uls e t a =25 c 100us dc 1 00ms 1m s 1 0ms 6 60 5 43 2 1 0 0 2 4 6 8 10 12 14 16 v ds = 10v i d =6 a 9075 60 45 3015 0 0.5 3.0 3.5 4.0 4.5 0 i d =6a 2.5 2.0 1.5 1.0 25 c 125 c 75 c ciss
a STG8205 ver 1.0 www.samhop.com.tw sep,17,2009 5 figure 13. switching test circuit figure 14. switching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width inverted v dd r d v v r s v g gs in gen out l 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance
STG8205 ver 1.0 www.samhop.com.tw sep,17,2009 6 package outline dimensions t s s op -8 0.85 0.033 0.80 0.031 0.19 0.30 0.007 0.012 1. this drawing is for general information only.refer to jedec drawing mo-153,variation aa,for proper dimensions,tolerances,datums,etc. 2. dimension d does not include mold flash,protrusions or gate burrs.mold flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. dimension e does not include inter-lead flash or protrusions.inter-lead flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. dimension b does not include dambar protrusion.allowable dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.dambar cannot be located on the lower radius of the foot. minimum space between protrusion and adjacent lead is 0.07 mm. notes: 5. dimension d and e to be determined at datum plane h. detail a detail a max min max min 2 3 2 3
STG8205 ver 1.0 www.samhop.com.tw sep,17,2009 7 tssop-8 tape and reel data tssop-8 carrier tape tssop-8 reel unit : @ package a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.08 tssop 8 4.40 1.60 ? 1.50 + 0.1 - 0.0 ? 1.50 + 0.1 - 0.0 12.00 2 0.3 1.75 5.50 2 0.05 8.00 4.00 2.00 2 0.05 0.30 2 0.05 unit : @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 100 12.5 16.0 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5
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